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Carrier Multiplication in Graphene

Published 11 Aug 2010 in cond-mat.mes-hall and physics.optics | (1008.1904v1)

Abstract: Graphene as a zero-bandgap semiconductor is an ideal model structure to study the carrier relaxation channels, which are inefficient in conventional semiconductors. In particular, it is of fundamental interest to address the question whether Auger-type processes significantly influence the carrier dynamics in graphene. These scattering channels bridge the valence and conduction band allowing carrier multiplication - a process that generates multiple charge carriers from the absorption of a single photon. This has been suggested in literature for improving the efficiency of solar cells. Here we show, based on microscopic calculations within the density matrix formalism, that Auger processes do play an unusually strong role for the relaxation dynamics of photo-excited charge carriers in graphene. We predict that a considerable carrier multiplication takes place, suggesting graphene as a new material for high-efficiency solar cells and for high-sensitivity photodetectors.

Citations (302)

Summary

  • The paper reveals that Auger processes in graphene drive efficient carrier multiplication, notably doubling carrier density under weak excitations.
  • The paper uses microscopic density matrix calculations to show that impact ionization outpaces Auger recombination in the first femtoseconds post-excitation.
  • The paper highlights that optimizing excitation strength and mitigating electron-phonon interactions can enhance graphene’s potential in high-efficiency optoelectronic devices.

Analysis of Carrier Multiplication in Graphene

The paper "Carrier Multiplication in Graphene" by Torben Winzer, Andreas Knorr, and Ermin Malic presents a comprehensive examination of the carrier dynamics in graphene, with a particular focus on the influence of Auger-type processes. These processes are of paramount interest due to their potential applications in enhancing the efficiency of optoelectronic devices, especially solar cells and photodetectors.

Key Findings

The study uses microscopic calculations within the density matrix formalism to investigate the roles of Auger recombination (AR) and impact ionization (II) in photo-excited graphene. It uncovers several crucial aspects:

  1. Auger Processes in Graphene:
    • Auger recombination and impact ionization are significant in graphene due to its zero-bandgap structure and linear energy dispersion.
    • The study shows that these processes can lead to carrier multiplication, a mechanism capable of generating multiple charge carriers from a single photon absorption.
  2. Carrier Multiplication (CM):
    • The research predicts substantial carrier multiplication, suggesting graphene as a promising material for high-efficiency solar cells and high-sensitivity photodetectors.
    • For weak excitations, CM is notably efficient, doubling the carrier density, whereas for strong excitations, the factor is reduced due to faster equilibrium achievement among carriers.
  3. Temporal Dynamics:
    • The paper examines time-dependent scattering rates for AR and II, revealing a marked asymmetry favoring II, which contributes to CM.
    • It is found that the II process surpasses AR significantly in the initial femtoseconds post-excitation, allowing for carrier multiplication before equilibrium is reached.
  4. Influence of Excitation Strength:
    • The effectiveness of CM is dependent on the excitation strength: weaker pulses yield more prolonged asymmetry and higher CM efficiency.
    • Stronger excitations induce rapid equilibrium, limiting the CM effect.
  5. Coulomb and Phonon Interactions:
    • The study incorporates both Coulomb-induced scattering and electron-phonon interactions, providing a robust framework to replicate observed experimental results.
    • Electron-phonon interactions, while a competing channel, are shown to moderately inhibit CM but do not negate its occurrence, underscoring strong Coulombic effects in graphene.

Implications and Future Directions

The findings suggest extensive practical implications for graphene in optoelectronic devices, notably in the development of more efficient solar cells where carrier multiplication can be harnessed to enhance photovoltaic conversion efficiency. This research provides a pivotal step toward understanding the ultrafast dynamics of carriers in graphene, a necessary precursor to practical device fabrication.

The paper also opens avenues for future exploration, particularly concerning the optimization of graphene-based devices to capitalize on CM. The possibility of achieving similar results in graphene-like materials or those with small bandgaps could be pursued, potentially broadening the application scope.

Conclusion

This work elevates the understanding of carrier dynamics in two-dimensional materials, showing that Auger processes can play a transformative role in energy conversion technologies. The discovery of efficient carrier multiplication driven by the unique properties of graphene points towards novel pathways for improving the performance of next-generation electronic and photonic devices. As the theoretical study aligns well with experimental observations, it sets the stage for both further theoretical exploration and experimental validation.

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