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Diminished Short Channel Effects in Nanoscale Double-Gate Silicon-On-Insulator Metal-Oxide- Semiconductor Field-Effect-Transistors due to Induced Back-Gate Step Potential

Published 18 Aug 2010 in cond-mat.mes-hall | (1008.3016v1)

Abstract: In this letter we discuss how the short channel behavior in sub 100 nm channel range can be improved by inducing a step surface potential profile at the back gate of an asymmetrical double gate (DG) Silicon-On-Insulator (SOI) Metal-Oxide-Semiconductor Field-Effect- Transistor (MOSFET) in which the front gate consists of two materials with different work functions.

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