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Probing Electron Spin Resonance in Monolayer Graphene
Published 27 Nov 2016 in cond-mat.mtrl-sci and cond-mat.mes-hall | (1611.08782v1)
Abstract: The precise value of the $g$-factor in graphene is of fundamental interest for all spin-related properties and their application. We investigate monolayer graphene on a Si/SiO2 substrate by resistively detected electron spin resonance (ESR). Surprisingly, the magnetic moment and corresponding g-factor of 1.952+/-0.002 is insensitive to charge carrier type, concentration, and mobility.
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