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Optically discriminating carrier-induced quasiparticle band gap and exciton energy renormalization in monolayer MoS2

Published 3 Dec 2017 in cond-mat.mtrl-sci, cond-mat.mes-hall, and cond-mat.str-el | (1712.00820v1)

Abstract: Optoelectronic excitations in monolayer MoS2 manifest from a hierarchy of electrically tunable, Coulombic free-carrier and excitonic many-body phenomena. Investigating the fundamental interactions underpinning these phenomena - critical to both many-body physics exploration and device applications - presents challenges, however, due to a complex balance of competing optoelectronic effects and interdependent properties. Here, optical detection of bound- and free-carrier photoexcitations is used to directly quantify carrier-induced changes of the quasiparticle band gap and exciton binding energies. The results explicitly disentangle the competing effects and highlight longstanding theoretical predictions of large carrier-induced band gap and exciton renormalization in 2D semiconductors.

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