2000 character limit reached
SOT-MRAM 300mm integration for low power and ultrafast embedded memories
Published 22 Oct 2018 in cond-mat.mes-hall, cs.ET, and physics.app-ph | (1810.10356v1)
Abstract: We demonstrate for the first time full-scale integration of top-pinned perpendicular MTJ on 300 mm wafer using CMOS-compatible processes for spin-orbit torque (SOT)-MRAM architectures. We show that 62 nm devices with a W-based SOT underlayer have very large endurance (> 5x1010), sub-ns switching time of 210 ps, and operate with power as low as 300 pJ.
Paper Prompts
Sign up for free to create and run prompts on this paper using GPT-5.
Top Community Prompts
Collections
Sign up for free to add this paper to one or more collections.