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Magneto-electronic properties of twisted bilayer graphene system

Published 20 Jul 2019 in cond-mat.mes-hall and cond-mat.mtrl-sci | (1907.08858v1)

Abstract: The generalized tight-binding model is developed to investigate the magneto-electronic properties in twisted bilayer graphene system. All the interlayer and intralayer atomic interactions are included in the Moire superlattice. The twisted bilayer graphene system is a zero-gap semiconductor with double-degenerate Dirac-cone structures, and saddle-point energy dispersions appearing at low energies for cases of small twisting angles. There exist rich and unique magnetic quantization phenomena, in which many Landau-level subgroups are induced due to specific Moire zone folding through modulating the various stacking angles. The Landau-level spectrum shows hybridized characteristics associated with the those in monolayer, and AA $&$ AB stackings. The complex relations among the different sublattices on the same and different graphene layers are explored in detail.

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