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Fermi surface chirality induced in a TaSe$_{2}$ monosheet formed by a Ta/ Bi$_{2}$Se$_{3}$ interface reaction

Published 14 Dec 2020 in cond-mat.mes-hall | (2012.07693v1)

Abstract: Spin-momentum locking in topological insulators and materials with Rashba-type interactions is an extremely attractive feature for novel spintronic devices and is therefore under intense investigation. Significant efforts are underway to identify new material systems with spin-momentum locking, but also to create heterostructures with new spintronic functionalities. In the present study we address both subjects and investigate a van der Waals-type heterostructure consisting of the topological insulator Bi${2}$Se${3}$ and a single Se-Ta-Se triple-layer (TL) of H-type TaSe${2}$ grown by a novel method which exploits an interface reaction between the adsorbed metal and selenium. We then show, using surface x-ray diffraction, that the symmetry of the TaSe2-like TL is reduced from D${3h}$ to C$_{3v}$ resulting from a vertical atomic shift of the tantalum atom. Spin- and angle-resolved photoemission indicates that, owing to the symmetry lowering, the states at the Fermi surface acquire an in-plane spin component forming a surface contour with a helical Rashba-like spin texture, which is coupled to the Dirac cone of the substrate. Our approach provides a new route to realize novel chiral two-dimensional electron systems via interface engineering that do not exist in the corresponding bulk materials.

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