Modelling and design of FTJs as high reading-impedance synaptic devices

Published 3 May 2021 in cs.ET | (2105.00752v1)

Abstract: We present an in-house modelling framework for Ferroelectric Tunnelling Junctions (FTJ), and an insightful study of the design of FTJs as synaptic devices. Results show that a moderately low-k tunnelling dielectric (e.g. SiO2) can increase the read current and the current dynamic range.

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