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Discovery of Superconductivity in Nb$_4$SiSb$_2$ with a V$_4$SiSb$_2$-Type Structure and Implications of Interstitial Doping on its Physical Properties

Published 9 Aug 2022 in cond-mat.supr-con and cond-mat.mtrl-sci | (2208.04834v1)

Abstract: We report on the discovery, structural analysis, and the physical properties of Nb$4$SiSb$_2$ -- a hitherto unknown compound crystallizing in the V$_4$SiSb$_2$-type structure with the tetragonal space group $I4/mcm$ and unit cell parameters $a$ = 10.3638(2) $\mathring{\mathrm{A}}$ and $c$ = 4.9151(2) $\mathring{\mathrm{A}}$. We find Nb$_4$SiSb$_2$ to be a metal undergoing a transition to a superconducting state at a critical temperature of $T{\rm c} \approx$ 1.6 K. The bulk nature of the superconductivity in this material is confirmed by the observation of a well defined discontinuity in specific heat with a normalized specific heat jump of $\Delta C(T_{\rm c})/\gamma T_{\rm c} = 1.33\, {\rm mJ}\, {\rm mol}{-1}\, {\rm K}{-2}$. We find that for Nb$4$SiSb$_2$, the unoccupied sites on the $4b$ Wyckoff position can be partially occupied with Cu, Pd, or Pt. Low-temperature resistivity measurements show transitions to superconductivity for all three compounds at $T{\rm c} \approx\, 1.2\, {\rm K}$ for Nb$4$Cu${0.2}$SiSb$2$, and $T{\rm c} \approx\, 0.8\, {\rm K}$ for Nb$4$Pd${0.2}$SiSb$2$ as well as for Nb$_4$Pt${0.14}$SiSb$_2$. The addition of electron-donor atoms into these void positions, henceforth, lowers the superconducting transition temperature in comparison to the parent compound.

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