Changing the properties of Hf$_{0.5}$Zr$_{0.5}$O$_{2}$ during cyclic repolarization of ferroelectric capacitors with different electrode materials

Abstract: The interest in the ferroelectric non-volatile memory as a candidate for low power consumption electronic memories was raised after the discovery of ferroelectricity in hafnium oxide. Doping by different elements of hafnia films allows improving their ferroelectric properties. In this work, the transport experiments are combined with the simulations to study the evolution of ferroelectric properties and the mean distance between oxygen vacancies during the endurance of hafnium-zirconium oxide in metal-ferroelectric-metal structures to study the impact of different metal electrodes.