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Observation of Weak Kondo Effect and Angle Dependent Magnetoresistance in Layered Antiferromagnetic V$_5$S$_8$ Single Crystal

Published 7 Feb 2023 in cond-mat.str-el and cond-mat.mtrl-sci | (2302.03301v1)

Abstract: The compound V$5$S$_8$ can also be represented by V${1.25}$S$_2$, a transition metal dichalcogenide (TMDC) with excess V. Very few TMDCs show magnetism and/or Kondo effect. Among them, the sister compounds VSe$_2$ and VTe$_2$ are recently proved to show ferromagnetism in addition to the low-temperature resistivity upturn due to Kondo effect. In this study, we show Kondo effect in V$_5$S$_8$ originated from the antiferromagnetic exchange interactions among the intercalated V atoms below the N$\acute{e}$el ($T_N$) temperature of 27 K. We find isotropic magnetic properties above $T_N$, while a strong magnetic anisotropy is noticed below $T_N$. In addition, below $T_N$ we find an out-of-plane ($H\parallel c$) spin-flop transition triggered at a critical field of 3.5 T that is absent from the in-plane ($H\perp c$). Angle-dependent magnetoresistance is found to be highly anisotropic in the antiferromagnetic state.

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