Exploring the Properties of the V_B^- Defect in hBN: Optical Spin Polarization, Rabi Oscillations, and Coherent Nuclei Modulation

Abstract: Optically active point defects in semiconductors have received great attention in the field of solid-state quantum technologies. Hexagonal boron nitride, with an ultra-wide band gap E_g = 6 eV, containing a negatively charged boron vacancy (V_B^-) with unique spin, optical, and coherent properties presents a new two-dimensional platform for the implementation of quantum technologies. This work establishes the value of V_B^ - spin polarization under optical pumping with {\lambda}ext = 532 nm laser using high-frequency ({\nu}mw = 94 GHz) electron paramagnetic resonance (EPR) spectroscopy. In optimal conditions polarization was found to be P = 38.4 %. Our study reveals that Rabi oscillations induced on polarized spin states persist for up to 30-40 microseconds, which is nearly two orders of magnitude longer than what was previously reported. Analysis of the coherent electron-nuclear interaction through the observed electron spin echo envelope modulation (ESEEM) made it possible to detect signals from remote nitrogen and boron nuclei, and to establish a corresponding quadrupole coupling constant Cq = 180 kHz related to nuclear quadrupole moment of 14N. These results have fundamental importance for understanding spin properties of boron vacancy.