A vertical gate-defined double quantum dot in a strained germanium double quantum well

Abstract: Gate-defined quantum dots in silicon-germanium heterostructures have become a compelling platform for quantum computation and simulation. Thus far, developments have been limited to quantum dots defined in a single plane. Here, we propose to advance beyond planar systems by exploiting heterostructures with multiple quantum wells. We demonstrate the operation of a gate-defined vertical double quantum dot in a strained germanium double quantum well. In quantum transport measurements we observe stability diagrams corresponding to a double quantum dot system. We analyze the capacitive coupling to the nearby gates and find two quantum dots accumulated under the central plunger gate. We extract the position and estimated size, from which we conclude that the double quantum dots are vertically stacked in the two quantum wells. We discuss challenges and opportunities and outline potential applications in quantum computing and quantum simulation.