Transversal transport and topological properties of binary heterostructures of topological insulators

Abstract: This paper discusses the topological and transport properties of binary heterostructures of different topological materials. The creation of multilayer devices is an alternative to building synthetic topological materials. By adjusting the pattern of layers, we control the global topological properties that favor tunneling and optimize the conductance of the edge state. Using a one-dimensional model and the method of Green's functions, we characterize each layer's edge states and make the chains couplings to generate the heterostructure. To study the bulk properties, we calculate the topological invariant from the Zak phase to build phase diagrams, and we obtain an analytical result for the separation line between different phases that depends on the hopping parameters of the heterostructure. We calculate the differential conductance with the non-equilibrium Green function technique showing the tunneling of the edge states and discussing its possible design and experimental application.