Synthetic magnetoelectric response of lattice bosonic insulators

Abstract: In the absence of parity and time-reversal symmetries, insulators can exhibit magnetoelectric responses, in which applied magnetic fields induce charge polarization and, conversely, applied electric fields induce magnetization. While there is a long history of the study of magnetoelectric response in fermionic insulators, the same for bosonic insulators has been limited. We consider the magnetoelectric response in lattice insulators built out of charged bosonic degrees of freedom and derive a bulk formula for the corresponding linear response tensor. The resulting formulae feature several contributions including a Chern-Simons integral over the bands of the bosonic excitations. We construct several minimal microscopic models that illustrate the ingredients required to obtain a sizable bosonic magnetoelectric response. Our formalism can be applied to bosonic Mott insulators subject to synthetic gauge fields and/or tilted potentials as well as to the spinon sector in the Coulomb phase of a $U(1)$ quantum spin liquid.