Magnetic-Transition-Induced Colossal Magnetoresistance in the Ferrimagnetic Semiconductor Mn$_3$Si$_2$Te$_6$

Abstract: In the ferrimagnetic semiconductor Mn$_3$Si$_2$Te$_6$, a colossal magnetoresistance (CMR) is observed only when a magnetic field is applied along the magnetic hard axis ($\mathbf{H}\parallel c$). This phenomenon suggests an unconventional CMR mechanism potentially driven by the interplay between magnetism, topological band structure, and/or chiral orbital currents (COC). By comparing electrical resistance measurements using continuous direct currents and pulse currents, we found that the current-induced insulator-metal transition, supporting the COC-driven CMR mechanism, is likely a consequence of Joule heating effects. Additionally, multiple magnetic field-induced metamagnetic transitions were identified through AC magnetostriction coefficient experiments, but only when $\mathbf{H}\parallel c$. Importantly, the transition at $\sim$ 5 T marks the boundary between the low-field CMR and high-field weak MR. These findings suggest that field-induced metamagnetic transition combined with partial polarization of magnetic moments are the primary causes of the band gap closure, leading to the observed CMR in Mn$_3$Si$_2$Te$_6$.