Shift current response in twisted double bilayer graphenes

Abstract: We calculate the shift current response in twisted double bilayer graphenes (TDBG) by applying the perturbative approach to the effective continuum Hamiltonian. We have performed a systematic study of the shift current in AB-AB and AB-BA stacked TDBG, where we have investigated the dependence of the signal on the twist angle, the vertical bias voltage and the Fermi level. The numerical analyses demonstrate that a large signal is generated from the formation of the moir\'e minibands. Notably, we also found that there is a systematic sign reversal of the signal in the two stacking configurations below the charge neutrality point for large bias voltages. We qualitatively explain the origin of this sign reversal by studying the shift current response in AB-stacked bilayer graphene.