Effects of Strain-Induced Pseudogauge Fields on Exciton Dispersion, Transport, and Interactions in Transition Metal Dichalcogenides

Abstract: We study the effects of strain on exciton dynamics in transition metal dichalcogenides (TMDs). Using the Bethe-Salpeter formalism, we derive the exciton dispersion relation in strained TMDs and demonstrate that strain-induced pseudo-gauge fields significantly influence exciton transport and interactions. Our results show that low-energy excitons occur at finite center-of-mass momentum, leading to modified diffusion properties. Furthermore, the exciton dipole moment depends on center-of-mass momentum, which enhances exciton-exciton interactions. These findings highlight the potential of strain engineering as a powerful tool for controlling exciton transport and interactions in TMD-based optoelectronic and quantum devices.