Quantum anomalous Hall effects and Hall crystals at fractional filling of helical trilayer graphene

Abstract: Helical trilayer graphene realizes a versatile moir\'e system in which anomalous Hall effects have been recently observed at integer and fractional fillings. Focusing on helical trilayers near the magic angle and under a substrate potential, we demonstrate that an isolated higher Chern band with Chern number $|C_{band}|=2$ emerges, enabling the exploration of many-body states beyond the conventional Landau level paradigm. We use exact diagonalization to predict a rich phase diagram of gapped states unattainable in a single $|C_{band}|=1$ band. At filling $\nu=2/3$, we identify a quantum Hall crystal with integer Hall conductance $|\sigma_{H}|=e^2/h$ coexisting with a $\sqrt{3}\times \sqrt{3}$ charge density wave order. At $\nu=1/2$, we find a quantum Hall pseudospin ferromagnet featuring extensive ground state degeneracy, Hall conductance $|\sigma_{H}|=e^2/h$, and $2\times 2$ charge order. Finally, at $\nu=1/3$ we find a translation-symmetric fractional Chern insulator with $|\sigma_{H}|=2e^2/3h$. By incorporating spin and valley degrees of freedom, we identify an optimal filling regime $\nu_{\rm{total}}=3+\nu$, where three flavors are fully filled, leaving the fourth at partial filling $\nu$. Notably, inter-flavor interactions renormalize the bandwidth and stabilize all the gapped phases even in realistic parameter regimes away from the chiral limit.