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Hole distribution and self-doping enhanced electronic correlation in hole-doped infinite-layer nickelates

Published 14 Jul 2025 in cond-mat.str-el and cond-mat.supr-con | (2507.10364v1)

Abstract: The minimal model for infinite-layer nickelates remains under debate, particularly regarding the hybridization between itinerant interstitial-$s$ and the correlated Ni-3$d_{x2-y2}$ orbitals, as well as the interaction between $d_{x2-y2}$ and other $3d$ orbitals. Additionally, how the doped holes in La${1-x}$Sr$_x$NiO$_2$ are distributed among different orbitals remain unresolved. Motivated by recent angle resolved photoemission spectroscopy (ARPES) experiments, we theoretically study the electronic structure of infinite-layer La${1-x}$Sr$x$NiO$_2$ at various doping levels. We find that, unlike the expectation from a rigid band shift, holes are equally distributed to Ni-3$d{x2-y2}$ and interstitial-$s$ orbitals. The role of interstitial-$s$ orbital is further confirmed from the renormalization of Ni-3$d_{x2-y2}$ band, for which the coupling between interstitial-$s$ and Ni-3$d_{x2-y2}$ exerts a non-negligible impact on the orbital-selective renormalization observed in ARPES. We also discuss the implication of our results to the single-band model, where the interstitial-$s$ orbital in the normal state of La${1-x}$Sr$_x$NiO$_2$ acts as charge donator enhancing the correlation of Ni-3$d{x2-y2}$ by increasing its concentration close to half-filling.

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